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Leon Fauth, from the former working group of Jens Friebe at Leibniz Universität Hannover, presented his paper on the topic: “Neutron radiation-induced failure rate of 650 V lateral GaN power devices”
The 2nd IEEE Workshop on Wide Bandgap Power Devices & Applications in Europe. Leon Fauth, from the former working group of Jens Friebe at Leibniz Universität Hannover, presented his paper on the topic: “Neutron radiation-induced failure rate of 650 V lateral GaN power devices”. This is one of the first publications on so-called “single-event-breakdowns” for novel power semiconductors. The so-called GaN power semiconductors are used, for example, in new USB power supplies for cell phones and enable ever smaller designs. In the future, they will also be used in electromobility, photovoltaic inverters and aviation applications, for example.
