Veröffentlichungen

Selected journal articles, more publications can be found on Google Scholar.

R Katsumi, Y Ota, M Benyoucef, Telecom-Band Quantum Dots Compatible with Silicon Photonics for Photonic Quantum Applications Adv. Quantum Technol., 2300423 (2024).
M Benyoucef, ed. (Book), Photonic Quantum Technologies: Science and Applications John Wiley & Sons (2023). M Gerstel, I Koehne, JP Reithmaier, R Pietschnig, M Benyoucef, Luminescent Properties of Phosphonate Ester-Supported Neodymium (III) Nitrate and Chloride Complexes Molecules 28(1), 48 (2023). A Musiał, M Wasiluk, M Gawełczyk, JP Reithmaier, M Benyoucef, G Sęk, W Rudno-Rudziński Distributed Bragg reflector‐mediated excitation of InAs/InP quantum dots emitting in the telecom C‐band Physica status solidi RRL (Rapid Research Letters), 2300063 (2023). R Katsumi, Y Ota, T Tajiri, S Iwamoto, K Ranbir, JP Reithmaier, M Benyoucef, Y Arakawa, CMOS-compatible integration of telecom band InAs/InP quantum-dot single-photon sources on a Si chip using transfer printing Applied Physics Express 16 (1), 012004 (2022). X You, MY Zheng, S Chen, RZ Liu, J Qin, MC Xu, ZX Ge, TH Chung, YK Qiao, YF Jiang, HS Zhong, MC Chen, H Wang, YM He, XP Xie, H Li, LX You, C Schneider, J Yin, TY Chen, M Benyoucef, YH Huo, S Höfling, Q Zhang, CY Lu, JW Pan Quantum interference with independent single-photon sources over 300 km fiber Advanced Photonics 4 (6), 066003-066003 (2022). T Smołka, K Posmyk, M Wasiluk, P Wyborski, M Gawełczyk, P Mrowiński, M Mikulicz, A Zielińska, JP Reithmaier, A Musiał, M Benyoucef Optical quality of InAs/InP quantum dots on distributed Bragg reflector emitting at 3rd telecom window grown by molecular beam epitaxy Materials 14 (21), 6270 (2021). P Podemski, M Gawełczyk, P Wyborski, H Salamon, M Burakowski, A Musiał, JP Reithmaier, M Benyoucef, G Sęk Spin memory effect in charged single telecom quantum dots Optics Express 29 (21), 34024-34034 (2021). A Musiał, M Mikulicz, P Mrowiński, A Zielińska, P Sitarek, P Wyborski, M Kuniej, JP Reithmaier, G Sęk, M Benyoucef InP-based single-photon sources operating at telecom C-band with increased extraction efficiency Applied Physics Letters 118 (22) (2021). I Koehne, M Gerstel, C Bruhn, JP Reithmaier, M Benyoucef, R Pietschnig Azido-Functionalized Aromatic Phosphonate Esters in ^RPOSS-Cage-Supported Lanthanide Ion (Ln = La, Nd, Dy, Er) Coordination Inorganic Chemistry 60 (7), 5297-5309 (2021). W Rudno-Rudziński, M Burakowski, JP Reithmaier, A Musiał, M Benyoucef Magneto-optical characterization of trions in symmetric InP-based quantum dots for quantum communication applications Materials 14(4), 942 (2021). L Rickert, B Fritsch, A Kors, JP Reithmaier, M Benyoucef Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities Nanotechnology 31 (31), 315703 (2020). M Benyoucef, A Bennett, S Götzinger, CY Lu Photonic quantum technologies Advanced Quantum Technologies 3 (2), 2000007 (2020). A Musiał, P Holewa, P Wyborski, M Syperek, A Kors, JP Reithmaier, G Sęk, M Benyoucef High-purity triggered single-photon emission from symmetric single InAs/InP quantum dots around the telecom C-band window Advanced Quantum Technologies 3 (2), 1900082 (2020). I Koehne, A Lik, M Gerstel, C Bruhn, JP Reithmaier, M Benyoucef, R Pietschnig Functionalized phosphonate ester supported lanthanide (ln= La, Nd, Dy, Er) complexes Dalton Transactions 49 (46), 16683-16692 (2020). AV Mikhailov, VV Belykh, DR Yakovlev, PS Grigoryev, JP Reithmaier, M Benyoucef, M Bayer Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths Physical Review B 98 (20), 205306 (2018). A Kors, JP Reithmaier, M Benyoucef Telecom wavelength single quantum dots with very small excitonic fine-structure splitting Applied Physics Letters 112 (17) (2018). C Carmesin, M Schowalter, M Lorke, D Mourad, T Grieb, K Müller-Caspary, M Yacob, JP Reithmaier, M Benyoucef, A Rosenauer, F Jahnke Interplay of morphology, composition, and optical properties of InP-based quantum dots emitting at the 1.55 µm telecom wavelength Physical Review B 96 (23), 235309(2017). A Kors, K Fuchs, M Yacob, JP Reithmaier, M Benyoucef Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities Applied Physics Letters 110 (3) 031101 (2017). VV Belykh, DR Yakovlev, JJ Schindler, EA Zhukov, MA Semina, M Yacob, JP Reithmaier, M Benyoucef, M Bayer Large anisotropy of electron and hole g factors in infrared-emitting InAs/InAlGaAs self-assembled quantum dots Physical Review B 93 (12), 125302 (2016). S Gordon, M Yacob, JP Reithmaier, M Benyoucef, A Zrenner Coherent photocurrent spectroscopy of single InP-based quantum dots in the telecom band at 1.5 µm Applied Physics B 122, 1-7 (2016). M Wu, A Trampert, T Al-Zoubi, M Benyoucef, JP Reithmaie Interface structure and strain state of InAs nano-clusters embedded in silicon Acta Materialia 90, 133-139 (2015). M Usman, JP Reithmaier, M Benyoucef Site‐controlled growth of GaAs nanoislands on pre‐patterned silicon substrates Physica status solidi (a) 212 (2), 443-448 (2015). M Yacob, JP Reithmaier, M Benyoucef Low-density InP-based quantum dots emitting around the 1.5 μm telecom wavelength range Applied Physics Letters 104 (2) (2014). M Benyoucef, M Yacob, JP Reithmaier, J Kettler, P Michler Telecom-wavelength (1.5 μm) single-photon emission from InP-based quantum dots Applied Physics Letters 103 (16) 162101 (2013). M Benyoucef, M Usman, JP Reithmaier Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates Applied Physics Letters 102 (13), 132101 11 (2013). M Benyoucef, V Zuerbig, JP Reithmaier, T Kroh, AW Schell, T Aichele, O. Benson Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature Nanoscale research letters 7, 493 (2012). M Benyoucef, JB Shim, J Wiersig, OG Schmidt Quality-factor enhancement of optical modes mediated by strong coupling in micron-size semiconductor disks Physica status solidi (b) 249 (5), 925-928 (2012). A Rastelli, F Ding, JD Plumhof, S Kumar, R Trotta, C Deneke, A Malachias, P Atkinson, E Zallo, T Zander, A Herklotz, R Singh, V Křápek, JR Schröter, S Kiravittaya, M Benyoucef, R Hafenbrak, KD Jöns, DJ Thurmer, D Grimm, G Bester, K Dörr, P Michler, OG Schmidt Controlling quantum dot emission by integration of semiconductor nanomembranes onto piezoelectric actuators Physica status solidi (b) 249 (4), 687-696 (2012). M Benyoucef, JB Shim, J Wiersig, OG Schmidt Quality-factor enhancement of supermodes in coupled microdisks Optics letters 36 (8), 1317-1319 (2011). M Pfeiffer, K Lindfors, C Wolpert, P Atkinson, M Benyoucef, A Rastelli, OG Schmidt, H Giessen, M Lippitz Enhancing the optical excitation efficiency of a single self-assembled quantum dot with a plasmonic nanoantenna Nano letters 10 (11), 4555-4558 (2010). J Potfajova, B Schmidt, M Helm, T Gemming, M Benyoucef, A Rastelli, OG Schmidt Microcavity enhanced silicon light emitting pn-diode Applied Physics Letters 96 (15) 151113 (2010). C Deneke, A Malachias, S Kiravittaya, M Benyoucef, TH Metzger, OG Schmidt Strain states in a quantum well embedded into a rolled-up microtube: X-ray and photoluminescence studies Applied Physics Letters 96 (14) 143101 (2010). F Ding, R Singh, JD Plumhof, T Zander, V Křápek, YH Chen, M Benyoucef, V Zwiller, K Dörr, G Bester, A Rastelli, OG Schmidt Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress Physical review letters 104 (6), 067405 (2010). M Benyoucef, L Wang, A Rastelli, OG Schmidt Toward quantum interference of photons from independent quantum dots Applied Physics Letters 95 (26) 261908 (2009). T Zander, A Herklotz, S Kiravittaya, M Benyoucef, F Ding, P Atkinson, S Kumar, JD Plumhof, K Dörr, A Rastelli, OG Schmidt Epitaxial quantum dots in stretchable optical microcavities Optics express 17 (25), 22452-22461 (2009). S Rauschenbach, R Vogelgesang, N Malinowski, JW Gerlach, M Benyoucef, G Costantini, Z Deng, N Thontasen, K Kern Electrospray ion beam deposition: soft landing and fragmentation of functional molecules at solid surfaces ACS nano 3 (10), 2901-2910 (2009). L Wang, A Rastelli, S Kiravittaya, M Benyoucef, OG Schmidt Self‐Assembled Quantum Dot Molecules Advanced Materials 21 (25-26) 2601 (2009). Benyoucef M, Lee HS, Gabel J, Kim TW, Park HL, Rastelli A, Schmidt OG Wavelength tunable triggered single-photon source from a single CdTe quantum dot on silicon substrate Nano letters 9(1), 304-307 (2009). A Bernardi, S Kiravittaya, A Rastelli, R Songmuang, DJ Thurmer, M Benyoucef, OG Schmidt On-chip Si/SiOx microtube refractometer Applied Physics Letters 93 (9) 094106 (2008). S Kiravittaya, M Benyoucef, R Zapf-Gottwick, A Rastelli, OG Schmidt Optical fine structure of single ordered GaAs quantum dots Physica E: Low-dimensional Systems and Nanostructures 40 (6), 1909-1912 (2008). M Benyoucef, S Kiravittaya, YF Mei, A Rastelli, OG Schmid Strongly coupled semiconductor microcavities: A route to couple artificial atoms over micrometric distances Physical Review B 77 (3), 035108 (2008). S Kiravittaya, M Benyoucef, R Zapf-Gottwick, A Rastelli, OG Schmidt Ordered GaAs quantum dot arrays on GaAs (001): Single photon emission and fine structure splitting Applied physics letters 89 (23) 233102 (2006). M Benyoucef, A Rastelli, OG Schmidt, SM Ulrich, P Michler Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots Nanoscale Research Letters 1, 172-176 (2006). M Schwab, H Kurtze, T Auer, T Berstermann, M Bayer, J Wiersig, N Baer, C Gies, F Jahnke, JP Reithmaier, A Forchel, M Benyoucef, P Michler Radiative emission dynamics of quantum dots in a single cavity micropillar Physical Review B 74 (4), 045323 (2006). SM Ulrich, M Benyoucef, P Michler, N Baer, P Gartner, F Jahnke, M Schwab, H Kurtze, M Bayer, S Fafard, Z Wasilewski, A Forche Correlated photon-pair emission from a charged single quantum dot Physical Review B 71 (23), 235328 (2005). M Benyoucef, SM Ulrich, P Michler, J Wiersig, F Jahnke, A Forchel Correlated photon pairs from single (In, Ga) As∕ GaAs quantum dots in pillar microcavities Journal of Applied Physics 97 (2) 023101 (2005). Benyoucef M, Ulrich SM, Michler P, Wiersig J, Jahnke F, Forchel A Enhanced correlated photon pair emission from a pillar microcavity New Journal of Physics 6 (1), 91 (2004). G Martinez-Criado, M Kuball, M Benyoucef, A Sarua, E Frayssinet, B Beaumont, P Gibart, CR Miskys, M Stutzmann Free-standing GaN grown on epitaxial lateral overgrown GaN substrates Journal of crystal growth 255 (3-4), 277-281 (2003). M Benyoucef, M Kuball, B Beaumont, V Bousquet Raman mapping investigations and finite element analysis of double epitaxial lateral overgrown GaN on sapphire substrates Applied physics letters 81(13), 2370-2372 (2002). M Benyoucef, M Kuball, B Beaumont, P Gibart Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates Applied physics letters 80(13), 2275-2277 (2002). M Benyoucef, M Kuball, G Hill, M Wisnom, B Beaumont, P Gibar Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary Applied Physics Letters 79 (25), 4127-4129 (2001). M Benyoucef, M Kuball, JM Sun, GZ Zhong, XW Fan Raman scattering and photoluminescence studies on Si/SiO₂ superlattices Journal of Applied Physics 89 (12), 7903-7907 (2001). M Kuball, FH Morrissey, M Benyoucef, I Harrison, D Korakakis, CT Foxon Nano‐fabrication of GaN Pillars Using Focused Ion Beam Etching Physica status solidi (a) 176 (1), 355-358 (1999).