2015

Der Zugriff auf Originaldateien ist passwortgeschützt (nur für interne Nutzung)

Fachzeitschriften

M. Usman, J. P. Reithmaier, and M. Benyoucef, “Site-controlled growth of GaAs nanoislands on pre-patterned silicon substrates” Phys. Stat. Sol. A 212, 443-448 (2015) (pdf-Datei)
M. Wu, A. Trampert, T. Al-Zoubi, M. Benyoucef, and J. P. Reithmaier, “Interface structure and strain state of InAs nano-clusters embedded in silicon”, Acta Mater., 90, 133-139 (2015) (pdf-Datei)
O. Karni, A.K. Mishra, G. Eisenstein, J.P. Reithmaier, "Nonlinear pulse propagation in InAs/InP quantum-dot optical amplifiers: Rabi-oscillations in the presence of non-resonant nonlinearities", Phys. Rev. B 91, 115304 (2015) (pdf-Datei)
P. Mrowinski, A. Musial, A. Marynski, M. Syperek, J. Misiewicz, A. Somers, J.P. Reithmaier, S. Höfling, G. Sek, “Magnetic field control of the neutral and charged exciton fine structure in single quantum dahses emitting at 1.55 µm”, Appl. Phys. Lett. 106, 053114 (2015) (pdf-Datei)
G. Eisenstein, O. Karni, A.K. Mishra, A. Capua, Dr. Gready, V. Sichkovskyi, V. Ivanov, J.P. Reithmaier, "Breaktroughs in Photonics 2014: Time scale dependent nonlinear dynamics in InAs/InP quantum dot gain media: from high-speed modulation to coherent light- matter interactions", IEEE Photonics Journal 7, 0700407,(invited 2015) (pdf-Datei)

S. Banyoudeh, J.P. Reithmaier, "High-density 1.55 µm InAs/InP(100) based quantum dots with reduced size inhomogeneity", J. Cryst. Growth 425, 299 (2015) (pdf-Datei)

V. V. Belykh, A. Greilich, D. R. Yakovlev, M. Yacob, J. P. Reithmaier, M. Benyoucef, and M. Bayer, “Electron and hole g- factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths”, Phys. Rev. B 92, 165307 (2015) (pdf-Datei)

Konferenzbeiträge

J.P. Reithmaier, V. Sichkovskyi, A. Becker, B. Bjelica, B. Witzigmann, D. Gready, G. Eisenstein, "InP based high-gain QD material for high-speed and narrow linewidth applications", Conf. on Physics of Quantum Electronics (PQE), Snowbird, Utah, USA (invited, January 2015) (pptx-File, 5 MB)

J. P. Reithmaier, G. Eisenstein, A. DeRossi, S. Combrié, "Power Saving in Communication Applications by Nano-Structured Optoelectronic Components", Technion / TU Berlin Green Photonic Symposium, Berlin (invited, March 2015) (pptx-File, 25 MB)

J.P. Reithmaier, "Nanostructured Materials for Optoelectronic Devices: Current Developments and Future Challenges", Int. Symp. on Advances in "Quantum Materials, Quantum Physics and Nanophotonics", Würzburg, Germany (invited, April 2015) (pptx-File, 93 MB)

J.P. Reithmaier, M. Benyoucef, "Challenges of epitaxial growth of III-V materials on Si platform for photonic applications", EMRS spring meeting, Lille, Frankreich (invited, May 2015) (pptx-File, 33 MB)

G. Eisenstein, A. Capua, O. Karni, J.P. Reithmaier, "Room Termperature Quantum Coherence Phenomena in QD-SOAs", Conf. on Lasers and Electro-Optics (CLEO), paper SM1F.1, San Jose, USA (invited, May 2015)

J.P. Reithmaier, S. Banyoudeh, A. Abdollahinia, A. Becker, V. Sichkovskyi, O. Eyal. G. Eisenstein, M. Bjelica, B. Witzigmann, G. Moille, S. Combrie, A. DeRossi, "InP-Based Nanostructured Semiconductors for Telecom Applications", German - French - Korean Workshop, Würzburg, Germany (invited, December 2015) (pptx-File, 14 MB)

A. Becker, M. Bjelica, V. Sichkovskyi, A. Rippien, F. Schnabel, P. Baum, B. Witzigmann, J.P. Reithmaier, "InP-based narrow-linewidth widely tunable QD-DFB lasers", VDE-ITG meeting, Leipzig, Germany (May 2015) (pdf-File)

A. Becker, V. Sichkovskyi, M. Bjelica, O. Eyal, P. Baum, A. Rippien, F. Schnabel, B. Witzigmann, G. Eisenstein, J.P. Reithmaier, "InP-based narrow-linewidth tunable quantum dot distributed feedback laser for coherent optical communication", Compoung semiconductor week (CSW), S. Barbara, USA (June 2015) (pptx-File, 3 MB)

P. Mrowinski, A. Musial, G. Sek, S. Höfling, J.P. Reithmaier, "Tailoring the quantum dash exciton fine structure by magnetic field", IEEE Optical MEMS and Nanophotonics (OMN), Jerusalem, Israel (August 2015)

S. Banyoudeh, A. Abdollanhinia, V. Sichkovskyi, J.P. Reithmaier, "High temperature operation of 1.55 µm InAs quantum dot lasers with high T₀ and T₁ values", European Semiconducto Laser Workshop, Madrid, Spain (September 2015) (pptx-File, 3 MB)