FB10 - Research

Research focus

Epitaxial growth of nanostructures on various substrates using MBE systems.
Development of single photon sources in the telecom wavelength range
Development of quantum dot emission in the telecom range for spin storage
Integration of single InAs/GaAs core-shell quantum dots in silicon
Realization of deterministic optical elements
Fabrication and investigation of microresonator structures (e.g. photonic crystals)
Exploration of 2D materials
Studies on structural properties of self-assembled quantum dots
Studies of light-matter interactions on the nanoscale of solid-state quantum systems
Spectroscopy of immobilized molecules and integration into photonics chip

Research projects

BMBF-Q.com
BMBF-Q.Link.X
BMBF-QR.X
DFG-DeLiCom
LOEWE- SMolBits

InP-based quantum dots:

(a) µ-PL spectrum from single InP-based quantum dot (QD). The inset shows the 2x2 µm2 2D AFM image of low density QDs. (b) Single-photon emission at telecom wavelengths from single InP-based QDs (in cooperation with Uni. Stuttgart). (c) Coherent properties of single InP-based — (a) µ-PL spectrum of a single InP-based quantum dot (QD). The inset shows the 2x2 µm2 2D AFM image of low-density QDs. (b) Single photon emission at telecommunication wavelengths from single InP-based QDs. (c) Coherent properties of single InP-based QDs. (d) The measured g-factors for electrons (full squares) and holes (open circles) for QDs emitting at telecommunication wavelengths.

Literature:

A. Musiał, M. Mikulicz,. Mrowinski, A. Zielinska, P. Sitarek, P. Wyborski, M. Kuniej, J. P. Reithmaier, G. Sek, and M. Benyoucef,
InP-basedsingle-photon sources operating at telecom C-band with increased extraction efficiency,
Appl. Phys. Lett.118, 221101 (2021).
P. Holewa, A. Maryński, M. Gawełczyk, P. Wyborski, J. Andrzejewski, J. P. Reithmaier, G. Sęk, M. Benyoucef, and M. Syperek,
Optical properties of InAs/InAlGaAs/InP(001) quantum dots grown by ripening process in molecular beam epitaxy,
Phys. Rev. Applied14, 064054 (2020).
A. Musiał, P. Holewa, P. Wyborski, M. Syperek, A. Kors, J. P. Reithmaier, G. Sęk and M. Benyoucef,
High-purity telecom wavelengthtriggered single-photon emission from symmetric single InAs/InP quantum dots,
Adv. Quantum Technol.3 (2), 1900082 (2020).
A. Kors, J. P. Reithmaier, M. Benyoucef,
Telecom wavelength single quantum dots with very small excitonic fine-structure splitting,
Appl.Phys. Lett.112, 172102 (2018).
S.Gordon, M. Yacob, J. P. Reithmaier, M. Benyoucef, A. Zrenner,
Coherent photocurrent spectroscopy of single InP-based quantum dots inthe telecom-band at 1.5 μm,
Appl. Phys. B122, 37 (2016).
V. V. Belykh, A. Greilich, D. R. Yakovlev, M. Yacob, J. P. Reithmaier, M. Benyoucef, and M. Bayer,
Electron and hole g- factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths,
Phys. Rev. B 92, 165307 (2015).
M. Yacob, J.P. Reithmaier and M. Benyoucef,
Low-density InP-based quantum dots emitting around the 1.5 μm telecom wavelengthrange,
Appl. Phys. Lett. 104, 022113 (2014).
M. Benyoucef, M. Yacob, J.P. Reithmaier, J. Kettler, P. Michler,
Telecom-wavelength (1.5 μm) single-photon emission from InP-basedquantum dots,
Appl. Phys. Lett. 103, 162101 (2013).

InP-based photonic crystal structures:

(a) μ-PL spectra of the L3 photonic crystal (PK) microresonator at 10 K (red line) and 300 K (black line) with a laser excitation power of 70 μW.(b) μ-PL spectra of the L3 PK microresonator: black line without polarization, red line with horizontal polarization and blue line with vertical polarization.insets: SEM image of the L3 PK microresonator. (c) μ-PL spectra of a single QPkt recorded at three different laser powers, showing excitonic (X) and biexcitonic (XX) emission lines. (d) X- and XX-PL intensities as a function of laser excitation power. The dotted and dashed lines fit to a slope of 0.8 and 1.7. (e) X and XX transitions plotted at 0° (red) and 90° (black) polarization angle, showing vanishing fine structure splitting.

Literature:

L. Rickert, B. Fritsch, A. Kors, J. P. Reithmaier and M. Benyoucef,
Mode properties of InP-based high Q/V L4/3 photonic crystal cavities for telecom wavelengths,
Nanotechnology31, 315703 (2020).
L. Rickert, J. P. Reithmaier and M. Benyoucef,
Telecom wavelengths from InP-based L3 photonic crystal cavities with optimized out-coupling properties,
AIP Conference Proceedings 2241, 020004 (2020).
A. Kors, K. Fucks, M. Yacob, J. P. Reithmaier and M. Benyoucef,
Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities,
Appl. Phys. Lett. 110, 031101 (2017).

Silicon-based quantum dots

Left: InAs QP embedded in a silicon matrix (in cooperation with PDI Berlin). Right: Light emission from single InAs/GaAs core-shell QP grown directly on silicon.

Literature:

M. Benyoucef, T. Alzoubi, J.P. Reithmaier, M. Wu, A. Trampert,
Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon,
Phys. Stat. Sol. A 211, 817 (2014).
M. Benyoucef, M. Usman, J.P. Reithmaier,
Bright light emissions with narrow spectral linewidth from single InAs/GaAs quantum dots directly grown on silicon substrates,
Appl. Phys. Lett. 102, 132101 (2013).
M. Benyoucef, J.P. Reithmaier,
Direct growth of III-V quantum dots on silicon substrates: structural and optical properties,
Semicond. Sci. Technol. 28, 094004 (2013) (invited).
M. Benyoucef, H-S. Lee, J. Gabel, T. W. Kim, H. L. Park, A. Rastelli and O. G. Schmidt,
Wavelength tunable triggered single-photon source from a single CdTe quantum dot on silicon substrate,
Nano Letters 9, 304 (2009).

GaAs-based quantum dots:

(a & b) Single photon emission and X lifetime of single QP grown by droplet epitaxy (in cooperation with HU Berlin).(c)Quality factor enhancement in coupled resonators (in cooperation with Uni. Magdeburg and IFW Dresden).

Literature:

M. Benyoucef, V. Zuerbig, J.P. Reithmaier, T. Kroh, A.W. Schnell, T. Aichele, O. Benson,
Single-photon emission from single InGaAs/GaAsquantum dots grown by droplet epitaxy at high substrates temperature,
Nanoscale Research Letters7, 493 (2012).
M. Benyoucef, J.-B. Shim, J. Wiersig, O.G.Schmidt,
Quality-factor enhancement of supermodes in coupled microdisks,
Opt. Lett.36, 1317 (2011).
M. Pfeiffer, K. Lindfors, C. Wolpert, P. Atkinson, M. Benyoucef, A. Rastelli, O. G. Schmidt, H. Giessen, M. Lippitz,
Enhancing the opticalexcitation efficiency of a single self-assembled quantum dot with a plasmonic nanoantenna,
Nano Letters10, 4555 (2010).
F. Ding, R. Singh, J. D. Plumhof, T. Zander, V. Křápek, Y. H. Chen, M. Benyoucef, V. Zwiller, K. Dörr, G. Bester, A. Rastelli, O. G.Schmidt,
Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress,
Phys. Rev. Lett. 104, 067405 (2010).
M. Benyoucef, L. Wang, A. Rastelli, O. G. Schmidt,
Toward quantum interference of photons from independent quantum dots,
Appl. Phys. Lett.95, 261908 (2009).

Spatially controlled quantum dots on pre-structured GaAs and silicon substrates:

Left: Spatially controlled QP on GaAs substrates. Right: III-V nanostructures localized in pre-structured silicon nanoholes.

Literature:

M. Usman, J. P. Reithmaier, and M. Benyoucef,
Site-controlled growth of GaAs nanoislands on pre-patterned silicon substrates,
Phys.Stat. Sol. A212, 443 (2015).
M. Benyoucef, M. Usman, T. Al-Zoubi, J.P. Reithmaier,
Pre-patterned silicon substrates for the growth of III-V nanostructures,
Phys. Stat.Sol. A209, 2402 (2012) (invited).
P. Atkinson, S. Kiravittaya, M. Benyoucef, A. Rastelli and O.G. Schmidt,
Site-controlled growth and luminescence of InAs quantum dotsusing in situ Ga-assisted deoxidation of patterned substrates,
Appl. Phys Lett.93, 101908 (2008).