Equipment

This page provides a brief overview of the facilities and devices available at INA. Contact us if you have questions about individual devices.

Lithography

Zeiss NVision 40 High End Cross Beam

Electron column: high resolution (1.3nm) field emission
Ion column: high resolution (4nm), suitable for deposition and etching

Raith eLine electron beam lithography

High resolution down to <20nm structure width
100 x 100 mm interferometrically controlled stage
Position accuracy 2nm in x- and y-direction
Beam diameter: 1,6nm

Karl Suess MA4 mask aligner

up to 4" substrates, up to 7" masks
resolution: standard 800nm, optional up to 300nm

EVG Al-4 mask aligner

up to 4" substrates, up to 5" masks

Epitaxy systems

Dual chamber molecular beam epitaxy systems

Coupled equipment for III-V semiconductor & SiGe layer systems
Semiautomatic sample transfer via central chamber, hydrogen cracker (H)
Very good layer thickness homogeneity, temperature homogeneity and doping homogeneity
Ultra High Vacuum (10E-10 - 10E-11 mbar)
In-situ control using RHEED
Materials Reactor C: Ga, In Al, As2,P2, Si, Be
Materials Reactor D: Si, Ge, B, P

Varian Gen II Modula MBE

coupled systems for GaAs and InP layer systems
layer thickness accuracy in the sub-nm range
in-situ control by means of RHEED / ultra high vacuum ( 10E-8 - 10E-10 mbar )
materials : Ga, In, Al, As2, Si, Be
reactor A: silicon e-beam evaporator, hydrogen cracker (H)
reactor B: phosphor cracker

Deposition

Roth ß Rau Ionsys 1000 IBD

Ion Beam Deposition

Multilayer systems (DBR,VCSEL,etc.)
Material: Metals(e.g.Al,Zr,Cr), Oxides(e.g.ITO,TiO,SiO2), Nitrides(e.g.Si2N3)
Process gases: Argon(Ar), Xenon(Xe), Oxygen(O2), Nitrogen(N2)

Pfeiffer PLS 500 vapor deposition system

Electron beam or thermal
Material: Titanium(Ti), Nickel(Ni), Chromium(Cr), Platinum(Pt), Aluminum(Al)

Balzers BAK 600 vapor deposition system

Electron beam or thermal
Process gas: argon (Ar)
Material: nickel (ni), titanium (Ti), platinum (Pt), gold (Au), germanium (Ge), chromium (Cr)

Oxford Plasmalab 80 PECVD

Plasma Enhanced Chemical Vapour Deposition

Process gases: silane (SiH4), hydrogen (H2), ammonia (NH3), nitrous oxide (N20)
Material: silicon nitride (SiN), silicon oxide (SiO), silicon (Si)

Emitech K550 Sputter Coater

Process gases: Argon (Ar)
Material: Platinum (Pt)

Dry etching equipment

2 Oxford Plasmalab 100 ICP-RIE

Inductive Coupled Plasma - Reactive Ion Etching

ICP 1: with fluorine donors for silicon deep etching (Bosch process)
ICP 2: with chlorine donors for etching semiconductor materials (e.g. GaAs)

Castor and Pollux RIE

Reactive Ion Etching
Parallel Plate Reactor

Process gases: trifluoromethane(CHF3), sulfur hexafluoride(SF6),oxygen(O2)
Material: silicon nitride(SiN), silicon oxide(SiO)

Oxford Plasmalab 80 Plus RIE

Reactive Ion Etching
Parallel Plate Reactor

Process gases: hydrogen(H2), methane(CH4)
for: Indium(In)-,Phosphor(P)-,Gallium(Ga)-,Arsenic(As)-compound semiconductors (e.g. InP)

Plasmalab RIE

Reactive Ion Etching

Etching of BCB, SiN, SiO2, Si
Gases: CHF3, Ar, SF6, O2

Analytics

DualScopeTM 95 SPM System

DualScopeTM 95 SPM scanner provides the facilities for all SPM modes.
Integrated electronics guarantee lowest noise level in electrical SPM modes.
Supported modes: contact mode (DC), intermittent mode (AC), non-contact mode, frequency modulation mode, transverse force mode, force spectroscopy, EFM, MFM, STM

2 Scanning Electron Microscopes / Hitachi s-4000 and s-4100

Resolution: 1.5nm at 30kV, WD 5mm
Magnification: 20x to 300000x
Accelerating voltage: 0.5 to 30kV
s-4000: Active imaging system DISS 5
s-4100: Energy dispersive spectrometer EDAX DX-4, Backscattered electron detector

Absorption and Macro-photoluminescence spectroscopy

Temperature controllable down to 10K
Sub-nm spectral resolution
From visible to near-infrared
Lock-in detection

Micro-photoluminescence

high-spectral resolution
high-spatial resolution
nitrogen-cooled detectors
helium-cooled cryostat

Phillips PW 3710 MPD X-ray diffractometer

High resolution ( thickness, strain, dislocations )
3-axis geometry