2017
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Journal Papers
- A. Kors, K. Fuchs, M. Yacob, J. P. Reithmaier, and M. Benyoucef, "Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities", Appl. Phys. Lett. 110, 031101 (2017). (pdf-Datei)
- J.P. Reithmaier, G. Eisenstein, "InP-Lasers: Trumping the incumbents with quantum dots", Compound Semiconductor vol. 23 (1), pp 54 - 58 (invited paper for the public, January 2017) (pdf-Datei)
- W. Rudno-Rudzinski, M. Syperek, J. Andrzejewski, A. Marynski, J. Misiewicz, A. Somers, S. Höfling, J.P. Reithmaier and G. Sek, "Carrier delocalization in InAs/InGaAlAs/inP quantum-dash-based tunnel injection system for 1.55 µm emission", AIP Advances 7, 015117 (2017). (pdf-Datei)
- G. Moille, S. Combrié, K. Fuchs, M. Yacob, J.P. Reithmaier and A. De Rossi, "Acceleration of the Nonlinear Dynamics in P-Doped Indium Phosphide Nanoscale Resonators", Optics letters 42 (4), pp. 795-798 (2017). (pdf-Datei)
- I. Khanonkin, A.K. Mishra, O. Karni, V. Mikhelashvili, S. Banyoudeh, F. Schnabel, V. Sichkovskyi, J.P. Reithmaier and G. Eisenstein, "Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots", AIP Advances 7, 035122 (2017). (pdf-Datei)
- A. Becker, V. Sichkovskyi, M. Bjelica, A. Rippien, F. Schnabel, M. Kaiser, O. Eyal, B. Witzigmann, G. Eisenstein and J.P. Reithmaier, "Widely Tunable Narrow-Linewidth 1.5 µm Light Source Based on a Monolithically Integrated Quantum Dot Laser Array", Appl. Phys. Lett. 110, 181103 (2017). (pdf-Datei)
- M Pieczarka, M. Syperek, D. Bieganska, C. Gilfert, E.M. Pavelescu, J.P. Reithmaier, J. Misiewicz and G. Sek, "Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system", Appl. Phys. Lett. 110, 221104 (2017). (pdf-Datei)
- C. Carmesin, M. Schowalter, M. Lorke, D. Mourad, T. Grieb, K. Müller-Caspary, M. Yacob, J. P. Reithmaier, M. Benyoucef, A. Rosenauer, and F. Jahnke, "Interplay of morphology, composition and optical properties of InP-based quantum dots emitting at the 1.55 µm telecom wavelength", Phys. Rev. B 96 (23), article 235309 (2017). (pdf-Datei)
- M. Gawełczyk, M. Syperek, A. Marynski, P. Mrowinski, Ł. Dusanowski, K. Gawarecki, J. Misiewicz, A. Somers, J. P. Reithmaier, S. Höfling, and G. Sek, "Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures", Phys. Rev. B 96 (24), article 245425 (2017). (pdf-Datei)
- Ł. Dusanowski, P. Mrowiński, M. Syperek, J. Misiewicz, A. Somers, S. Höfling, J.P. Reithmaier, and G. Sęk, "Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics", Appl. Phys. Lett. 111, 253106 (2017). (pdf-Datei)
- W. Rudno-Rudziński, M. Syperek, A. Maryński, J. Andrzejewski, J. Misiewicz, S. Bauer, V.I. Sichkovskyi, J.P. Reithmaier, M. Schowalter, B. Gerken, A. Rosenauer, G. Sęk, "Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well-Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers", physica status solidi a, 1700455 (2017). (pdf-Datei)
- O. Eyal, A. Willinger, S. Banyoudeh, F. Schnabel, V. Sichkovskyi, V. Mikhelashvili, J.P. Reithmaier, and G. Eisenstein, "Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures", Optics Express 25 (22), pp. 27262-27269 (2017). (pdf-Datei)
- P. Mrowinski, L. Dusanowski, A. Somers, S. Höfling, J.P. Reithmaier, J. Misiewicz, G. Sek, "InAs on InP Quantum Dashes as Single Photon Emitters at the Second Telecommunication Window: Optical, Kinetic, and Excitonic Properties", Acta Physica Polonica A, vol. 132 (2), pp. 382-385 (2017). (pdf-Datei)
- A. Voss, S.R. Stateva, J.P. Reithmaier, M.D. Apostolova, C. Popov, "Patterning of the surface termination of ultrananocrystalline diamond films for guided cell attachment and growth", Surf. Coat. Techol. 321, pp. 229-235 (2017). (pdf-Datei)
Invited Conference Contributions
- J.P. Reithmaier, "Impact of nanoscale physics on the performance
of optoelectronic devices", Conf. on Physics of Quantum Electronics (PQE), Snowbird, Utah, USA (plenary talk, January 2017). - J.P. Reithmaier, G. Eisenstein, "High-Bandwidth Temperature-Stable 1.55 µm Quantum Dot Lasers", SPIE Photonics West, San Francisco, USA (February 2017).
- J.P. Reithmaier, "1.5 µm InP-based quantum dot materials for high-performance classical and quantum optical communication", UK Semiconductor, Sheffield, UK (plenary talk, July 2017).
- J.P. Reithmaier, G. Eisenstein, "InP-based Quantum Dot Lasers", OSA Advanced Photonics Congress, New Orleans, USA (July 2017).
- M. Benyoucef, J. P. Reithmaier, “Telecom wavelengths single InP-based quantum dots and microcavities”, 7th Korean-German-French workshop on nanophotonics Le Lazaret – Sète, France (October, 2017).
- J.P. Reithmaier, G. Eisenstein, "Nanoscaled gain material on their impact on laser properties", Workshop on Physics and Technology of Semiconductor Lasers, Krakow, Poland (plenary talk, October 2017).
- J.P. Reithmaier, G. Eisenstein, "QD laser dynamics and applications in high-speed direct modulation and narrow linewidth emission", International Symposium on Physics and Applications of Laser Dynamics, Paris, France (Nov. 2017).
Further Conference Contributions
- N. Felgen, B. Naydenov, A. Schmidt, J.P. Reithmaier, F. Jelezko, C. Popov, Diamond nanopillars and photonic crystals for integration of color centers, 11th New Diamond and Nano Carbons Conference 2017 (NDNC 2017), Cairns, Australia (May 2017).
- A. Kors, J.P. Reithmaier, M. Benyoucef, "InP-based photonic crystal microcavities embedded with InAs quantum dots for telecom wavelengths", Compound semiconductor week (CSW, ISCS + IPRM), Berlin, Germany (May, 2017), Conf. Proceed., C1.5.
- A. Abdollahinia, S. Banyoudeh, Ori Eyal, G. Eisenstein, J.P. Reithmaier, "Improved dynamic properties of directly modulated high-speed 1.5 µm quantum dot lasers", Compound semiconductor week (CSW, ISCS + IPRM), Berlin, Germany (May, 2017), Conf. Proceed., C7.6.
- A. Becker, V. Sichkovskyi, A. Rippien, F. Schnabel, M. Kaiser, J.P. Reithmaier, "InP-based narrow-linewidth widely tunable quantum dot laser device for high-capacity coherent optical communication", VDE-ITG-Tagung, Leipzig, Germany (May, 2017). ITG-Fachbericht 272, 134 (2017).
- A. Abdollahinia, A. Rippien, S. Banyoudeh, J.P. Reithmaier, "Highly Temperature-Stable 1.5 µm Quantum Dot Lasers", Congress of the International Commission of Optics (ICO), Tokyo, Japan (August, 2017). Conf. Proceed., M1J-02.
- M. Schowalter, C. Carmesin, M. Lorke, D. Mourad, T. Grieb, K. Müller‐Caspary, M. Yacob, J. P. Reithmaier, M. Benyoucef, A. Rosenauer and F. Jahnke, “Morphology of InAs/InAlGaAs quantum dots emitting in the low‐loss telecom wavelength range” Microscopy conference, Lausanne, Switzerland (August 2017).
- A. Kors, L. Rickert, A. Sayyed, K. Fuchs, J. P. Reithmaier, and M. Benyoucef “InP-based photonic crystal cavities embedded with InAs quantum dots for telecom wavelengths”, International Conference on Optics of Excitons in Confined Systems 2017, Bath, UK (September, 2017).