2018
download of original files is password protected (only internal access)
Journal Papers
- S. Bauer, V. Sichkovskyi, J.P. Reithmaier, "Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 µm high-speed lasers", Journal of Crystal Growth, vol. 491, pp. 20-25 (2018). (pdf-Datei)
- W. Rudno-Rudziński, M. Syperek, A. Maryński, J. Andrzejewski, J. Misiewicz, S. Bauer, V. Sichkovskyi, J.P. Reithmaier, M. Schowalter, B. Gerken, A. Rosenauer, G. Sęk, "Control of Dynamic Properties of InAs/InAlDaAs/InP Hybrid Quantum Well-Quantum Dot Structures Designed as Active Parts of 1.55 µm Emitting Lasers", Phys. Status Solidi A, vol. 215, 1700455 (2018). (pdf-Datei)
- M. Syperek, J. Andrzejewski, E. Rogowicz, J. Misiewicz, S. Bauer, V. I. Sichkovskyi, J.P. Reithmaier, G. Sek, "Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 µm", Appl. Phys. Lett. 112, 221901 (2018). (pdf-Datei)
- N. Felgen, B. Naydenov, F. Jelezko, J. P. Reithmaier, C. Popov, "Homoepitaxial Diamond Structures with Incorporated SiV Centers", Phys. Status Solidi A, vol. 215, 1800371 (2018). (pdf-Datei)
- A. Kors, J. P. Reithmaier, M. Benyoucef, "Telecom wavelength single quantum dots with very small excitonic fine-structure splitting", Appl. Phys. Lett. 112, 172102 (2018). (pdf-Datei)
- L. Dusanowski, M. Gawelczyk, J. Misiewicz, S. Höfling, J. P. Reithmaier, G. Sek, "Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 µm", Appl. Phys. Lett. 113, 043103 (2018). (pdf-Datei)
- V. Mikhelashvili, O. Eyal, I. Khanonkin, S. Banyoudeh, V. Sichkovskyi, J. P. Reithmaier, G. Eisenstein, "On the relationship between electrical and electro-optical characteristics of InAs/InP quantum dot lasers", Journal of Applied Physics 124, 054501 (2018). (pdf-Datei)
- A. Abdollahinia, S. Banyoudeh, A. Rippien, F. Schnabel, O. Eyal, I. Cestier, I. Kalifa, E. Mentovich, G. Eisenstein, J.P. Reithmaier, "Temperature stability of static and dynamic properties of 1.55 µm quantum dot lasers", Optics Express 26, 6056 (2018). (pdf-Datei)
- D. Merker, M. Kesper, L. L. Kailing, F. Herberg, J. P. Reithmaier, I. V. Pavlidis, C. Popov, "Nanostructured modified ultrananocrystalline diamond surfaces as immobilization support for lipases", Diamond and Related Materials 90, 32-39 (2018). (pdf-Datei)
- W. Rudno-Rudzinski, M. Syperek, J. Andrzejewski, E. Rogowicz, G. Eisenstein, S. Bauer, V. I. Sichkovskyi, J. P. Reithmaier, G. Sek, "Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot-quantum well structures", Scientific Reports 8, 12317 (2018). (pdf-Datei)
- I. Khanonkin, A. M. Mishra, O. Karni, S. Banyoudeh, F. Schnabel, V. Sichkovskyi, V. Mikhelashvili, J. P. Reithmaier, G. Eisenstein, "Ramsey fringes in a room-temperature quantum-dot semiconductor optical amplifier", Phys. Rev. B 97, 241117 (2018). (pdf-Datei)
I. Khanonkin, G. Eisenstein, M. Lorke, S. Michael, F. Jahnke, A. K. Mishra, J. P. Reithmaier, "Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier", Phys. Rev. B 98, 125307 (2018). (pdf-Datei)
A. V. Mikhailov, V. V. Belykh, D. R. Yakovlev, P. S. Grigoryev, J. P. Reithmaier, M. Benyoucef, M. Bayer, "Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths", Phys. Rev. B 98, 205306 (2018). (pdf-Datei)
P. Mrowiński, M. Emmerling, C. Schneider, J. P. Reithmaier, J. Misiewicz, S. Höfling, G. Sęk, "Photonic engineering of highly linearly polarized quantum dot emission at telecommunication wavelengths", Phys. Rev. B 97, 165427 (2018). (pdf-Datei)
J. P. Reithmaier, M. Benyoucef, "Chapter Two - III-V on Silicon Nanocomposites", Semiconductors and Semimetals 99, 27-42 (2018). (pdf-Datei)
Invited Conference Contributions
- J.P. Reithmaier, G. Eisenstein, "High-Speed Directly Modulated 1.55 µm Quantum Dot Lasers", Conf. on Physics of Quantum Electronics (PQE), Snowbird, Utah, USA (Jan. 2018).
- J.P. Reithmaier, G. Eisenstein, "Temperature Insensitive Quantum Dot Lasers and Optical Amplifiers", Int. Conf. on Nano-photonics and Nano-optelectronics", Yokohama, Japan (April 2018).
- G. Eisenstein, J.P. Reithmaier, "How short time scales substitute for cryogenic cooling: Quantum Coherent Effect in Room Temperature QD Amplifiers", Photonics Europe, Strasbourg, France (May, 2018).
- J.P. Reithmaier, M. Benyoucef, "Telecom Wavelength Nanophotonic Elements for Quantum Communication", Symposium on Quantum Science and Quantum Engineering, Technion, Haifa, Israel (May 2018).
- G. Eisenstein, M. Benyoucef, J.P. Reithmaier, "Nanostructured Semiconductors for the 1.5 µm Wavelength Range and Their Applications in Classical and Quantum Communication", Sino-German Symposium on Functional Nano-Materials Science (FNMS2018), Hangzhou, China (May 2018).
- M. Benyoucef, J.P. Reithmaier, "Telecom Wavelength Nanophotonic Elements for Quantum Communication", IEEE Summer Topicals Meeting, Waikoloa, Hawaii, USA (July 2018).
- J.P. Reithmaier, G. Eisenstein, "1.55 µm Quantum Dot Lasers and Amplifiers with High Temperature Stability", European Semiconductor Laser Workshop, Bari, Italy (September 2018).
- J.P. Reithmaier, G. Eisenstein, "1.5 µm Quantum Dot Lasers", IEEE Int. Conf. on Semicond. Lasers, Santa Fe, USA (September 2018).
- M. Benyoucef, J.P. Reithmaier , “InP-based quantum dots embedded in microcavity emitting in the low‐loss telecom wavelength range”, 8th Korean-German-French workshop on nanophotonics, Gyeryong, Korea (October, 2018).
- J.P. Reithmaier, "Semiconductor Nanomaterials and Applications for Classical and Quantum Optical Communication", 6th Nano Israel Conference, Jerusalem, Israel (October 2018).
- J.P. Reithmaier, "Nanostructured Materials and Devices for Optical Communication and Quantum Information Technologies", Nanosymposium, Wien, Austria (December 2018).
- J.P. Reithmaier, "Novel Nanotechnological Approaches for Quantum Communication and Quantum Computing", Physics Colloquium at Wroclaw University of Technology, Wroclaw, Poland (10. December 2018).
- J.P. Reithmaier, "Nanostructured Materials and Devices for Optical Communication and Quantum Information Technologies", Physics Seminar of the Center for Advanced Materials and Nanotechnology, Wroclaw, Poland (11. December 2018).
Further Conference Contributions
- N. Felgen, A. Schmidt, J.P. Reithmaier, C. Popov, Fabrication of diamond photonic structures, 3rd International Symposium on Dielectric Materials and Applications (ISyDMA’2018), Beni Mellal, Morocco (April 2018).
- O. Eyal, A. Willinger, V. Mikhelashvili, S. Banyoudeh, F. Schnabel, V. Sichkovskyi, J.P. Reithmaier, G. Eisenstein, "High Performance 1550 nm Quantum Dot Semiconductor Optical Amplifiers Operating at 25-100 °C", Optical Fiber Communications conference and Expostion (OFC), San Diego, USA (March 2018).
- A. Becker, T. Septon, S. Ghosh, M. Bjelica, V. Sichkovskyi, A. Rippien, F. Schnabel, B. Witzigmann, G. Eisenstein, J.P. Reithmaier, "Narrow-Linewidth 1.5 µm Quantum Dot Distributed Feedback Lasers for Next Generation Coherent Communication", VDE-ITG-Tagung, Leipzig, Germany (May, 2018). ITG-Fachbericht.
- L. Rickert, B. Fritsch, A. Kors, K. Fuchs, J. P. Reithmaier, and M. Benyoucef, “Telecom wavelengths single InP-based quantum dots embedded in microcavity”, International Conference on Quantum Dots, Toronto, Canada (June, 2018)
- A. Maryński, M. Syperek, J. Andrzejewski, M.Yacob, J. P. Reithmaier, M. Benyoucef, and G. Sęk, “Thermal stability and carrier migration process in low-density InAs/InAlGaAs/InP quantum dots emitting at telecommunication C-band”, NOEKS 14, Berlin (September, 2018)
- S. Bauer, V. Sichkovskyi, J.P. Reithmaier, "Growth and optical characteristics of InP-based tunnel injection structures and their application in high-speed lasers", Int. Conf. on Molecular Beam Epitaxy (ICMBE), Shanghai, China (September, 2018).
- T. Septon, S. Gosh, A. Becker, M. Bjelica, V. Sichkovskyi, A. Rippien, F. Schnabel, B. Witzigmann, J.P. Reithmaier, G. Eisenstein, "Spectral characteristics of narrow linewidth InAs/InP quantum dot distributed feedback lasers", Int. Sem. Laser Conf. (ISLC), Santa Fe, USA (September, 2018).
- I. Khanonkin, M. Lorke, S. Michael, A.K. Mishra, J.P. Reithmaier, F. Jahnke, G. Eisenstein, "Carrier Dynamics in a 1.55 μm Tunneling Injection Quantum Dot Semiconductor Optical Amplifier", Int. Sem. Laser Conf. (ISLC), Santa Fe, USA (September, 2018).
- V. Miskhelashvili, O. Eyal, I. Khanonkin, S. Banyoudeh, V. Sichkovskyi, J.P. Reithmaier, G. Eisenstein, "On The Relationship Between Electrical and Electro-Optical Characteristics in 1.55 μm Quantum Dot Lasers", Int. Sem. Laser Conf. (ISLC), Santa Fe, USA (September, 2018).
- N. Felgen, T. Jaffe, B. Naydenov, A. Schmidt, J. P. Reithmaier, M. Orenstein, F. Jelezko, C. Popov, Diamond photonic structures for integration of color centers, 29th International Conference on Diamond and Carbon Materials, Dubrovnik, Croatia (September 2018).
- D. Merker, T. Weingärtner, T. Bergfeldt, B. Popova, J.P. Reithmaier, C. Popov, Silver nanoparticles embedded in ultrananocrystalline diamond films for antimicrobial applications in implant coatings, 29th International Conference on Diamond and Carbon Materials, Dubrovnik, Croatia (September 2018).