1992 und früher

Der Zugriff auf Originaldateien ist passwortgeschützt (nur für interne Nutzung)

Fachzeitschriften

R. Küchler, P. Hiergeist, G. Abstreiter, J.P. Reithmaier, H. Riechert, R. Lösch, "Magneto Luminescence Excitation Spectroscopy in Strained Layer Heterostructures" in "High magnetic fields in semiconductor physics 3. Quantum Hall effect, transport and optics", edited by G. Landwehr, Springer, Berlin, Springer Ser. Solid-State Sci. 101, 514 (1992)

F.R. Gfeller, P. Buchmann, P.W. Epperlein, H.P. Meier, J.P. Reithmaier, "High-Power single-mode AlGaAs lasers with bent-waveguide nonabsorbing etched mirrors", J. Appl. Phys. 72, pp. 2131 (1992) (pdf-Datei)

F.R. Gfeller, P. Buchmann, K. Dätwyler, J.P. Reithmaier, P. Vettiger, D.J. Webb, "50 mW CW-Operated Single-Mode Surface-Emitting AlGaAs Lasers with 45° Total Reflection Mirrors", IEEE Photonics Technol. Lett. 4, pp. 698-700 (1992) (pdf-Datei)

J.P. Reithmaier, R.F. Broom, H.P. Meier, "Gallium Desorption during Growth of (Al,Ga)As by Molecular Beam Epitaxy", Appl. Phys. Lett. 61, pp. 1222-1224 (1992) (pdf-Datei)

V. Shanov, B. Ivanov, C. Popov, "Laser chemical vapour deposition of thin aluminium coatings", Thin Solid Films 207, pp. 71-74 (1992) (pdf-Datei)

B. Ivanov, C. Popov, V. Shanov, "Mass spectrometric study of laser-induced pyrolytic decomposition of TMA", Advanced Materials for Optics and Electronics 1, pp 287-292 (1992) (pdf-Datei)

H. Riechert, D. Bernklau, J.P. Reithmaier, R.D. Schnell, "MBE Growth of High Performance GaAs/GaAlAs and InGaAs/GaAlAs Double Barrier Quantum Well Structures for Resonant Tunneling Devices" in Resonant Tunneling in Semiconductors, edited by L.L. Chang et al., Plenum Press, New York, (1991) 31

J.P. Reithmaier, H. Riechert, H. Schlötterer, G. Weimann, "In-Desorption during MBE-Growth of Strained InGaAs-Layers", J. Cryst. Growth 111, pp. 407-412 (1991) (pdf-Datei)

H. Riechert, D. Bernklau, J.P. Reithmaier, R.D. Schnell, "MBE Growth and Post-Growth Annealing of GaAs-Based Resonant Tunneling Structures, viewed in relation to interface roughness", J. Cryst. Growth 111, pp. 1100-1104 (1991) (pdf-Datei)

R. Zaus, M. Schuster, H. Göbel, J.P. Reithmaier, "Characterization of (In,Ga)As/GaAs Strained-Layer Multiple Quantum Wells with High-Resolution X-Ray Diffraction and Computer Simulations", Appl. Surf. Sci. 50, pp. 92 (1991) (pdf-Datei)

J.P. Reithmaier, R. Höger, H. Riechert, "Experimental evidence for the transition from two- to three-dimensional behaviour of excitons in quantum-well structures", Phys. Rev. B 43, pp. 4933 (1991) (pdf-Datei)

V. Shanov, B. Ivanov, C. Popov, "Laser induced direct writing of aluminium", Journal de Physique IV 1, pp. C2 373-380 (1991)

J.P. Reithmaier, R. Höger, H. Riechert, A. Heberle, G. Abstreiter, G. Weimann, "Band offset in elastically strained InGaAs/GaAs multiple quantum wells determined by optical absorption and electronic Raman scattering", Appl. Phys. Lett. 56, pp. 536 (1990) (pdf-Datei)

H. Riechert, D. Bernklau, J.P. Reithmaier, R.D. Schnell, "High performance resonant tunneling structures on GaAs substrates", Electronics Lett. 26, pp. 340 (1990) (pdf-Datei)

R. Zaus, J. Peisel, B. Lengeler, J.P. Reithmaier, M. Schuster, H. Göbel, "Charakterisierung von (In,Ga)As/GaAs strained layer Multi-Quantum-Well-Strukturen mit hochauflösender Röntgendiffraktometrie und Computersimulation", ITG Fachbericht 112, 195 (VDE-Verlag, Berlin, Offenbach, 1990)

R.D. Schnell, D. Bernklau, H.-P. Reithmaier, H. Riechert, "Doppelbarrieren-Strukturen für elektronische Bauelementanwendungen resonanter Tunnelphänomene", ITG Fachbericht 112, 213 (VDE-Verlag, Berlin, Offenbach, 1990)

J.P. Reithmaier, H. Riechert, P. Hiergeist, G. Abstreiter, "Confinement of light hole valence band states in pseudomorphic InGaAs/Ga(Al)As quantum wells", Appl. Phys. Lett. 57, pp. 957-959 (1990) (pdf-Datei)

J.P. Reithmaier, H. Cerva, R. Lösch, "Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum well by photoluminescence and transmission electron microscopy", Appl. Phys. Lett. 54, pp. 48-50 (1989) (pdf-Datei)

B.E. Maile, A. Forchel, R. Germann, D. Grützmacher, H.P. Meier, J.P. Reithmaier, "Fabrication and optical characterization of quantum wires from semiconductor materials with varying In-content", J. Vac. Sci. Technol. B 7, pp. 2030-2033 (1989) (pdf-Datei)

Konferenzbeiträge

J.P. Reithmaier, St. Hausser, H.P. Meier, W. Walter, "Growth Studies of (Al,Ga,In)As on InP by Molecular Beam Epitaxy", Int. MBE-Conference, Schwäbisch Gmünd, Germany (August 1992)

R. Germann, St. Hausser, J.P. Reithmaier, "Reactive Ion Etching on InAlAs with Ar/Cl2 Mixtures for Ridge Waveguide Lasers", Int. Conf. on Microcircuit and Engineering, Regensburg, Germany, (September 1992)

L.R. Brovelli, R. Germann, J.P. Reithmaier, H. Jäckel, H.P. Meier, "Mode-Locked InGaAs/AlGaAs QW Laser with Integrated Passive Waveguide-Cavity and Stark-Modulator Grown on Nonplanar Substrate", IEEE Int. Semiconductor Laser Conf., Takamatsu, Japan (September 1992)

J.P. Reithmaier, R. Broom, R. Germann, St. Hausser, Ph. Pitner, W. Walter, P. Wolf, "Low Threshold Current Density InAlAs/InGaAlAs/InGaAs Long Wavelength MQW-SCH Lasers Grown by MBE", Int. Euro MBE-Conference, Tampere, Finland (April 1991)

J.P. Reithmaier, H. Riechert, H. Schlötterer, G. Weimann, "In-Desorption during MBE-Growth of Strained InGaAs-Layers", Int. MBE-Conf., San Diego, USA (August 1990)

H. Riechert, D. Bernklau, J.P. Reithmaier, R.D. Schnell, "MBE-Growth and Post-Growth Annealing of GaAs-Based Resonant Tunneling Structures, Viewed in Relation to Interface Roughness", Int. MBE-Conf., San Diego, USA (August 1990)

H. Riechert, D. Bernklau, J.P. Reithmaier, R.D. Schnell, "MBE Growth of High Performance GaAs/GaAlAs and InGaAs/GaAlAs Double Barrier Quantum Well Structures for Resonant Tunneling Devices", NATO Advanced Research Workshop: Resonant Tunneling in Semiconductors - Physics and Applications, El Escorial, Spain (May 1990)

R. Küchler, P. Hiergeist, G. Abstreiter, J.P. Reithmaier, H. Riechert, R. Lösch, "Magneto Luminescence Excitation Spectroscopy in Strained Layer Heterostructures" in "High magnetic fields in semiconductor physics 3. Quantum Hall effect, transport and optics", Int. Conf. on the Appl. of High Magnetic Fields in Semicond. Physics, Würzburg, Germany (July 1990)

J.P. Reithmaier, H. Riechert, O. Heinrich, P. Hiergeist, G. Abstreiter, "Strain effects on valence band states of pseudmorphic InGaAs/Ga(Al)As multiple quantum wells", Int. Conf. on GaAs and Related Compounds, Jersey Island, Great Britain (September 1990)

R. Zaus, M. Schuster, H. Göbel, J.P. Reithmaier, "Characterization of (In,Ga)As/GaAs Strained-Layer Multiple Quantum Wells with High-Resolution X-Ray Diffraction and Computer Simulations",E-MRS Fall Conf., Strasbourg, France (November 1990)

J.P. Reithmaier, "Bestimmung des Bandkantensprungs in elastisch verspannten InGaAs/GaAs-Mehrfachquantentöpfen mit optischen Methoden", DGKK-Workshop in Aachen, Germany (November 1989) (invited)

J.P. Reithmaier, H. Cerva, R. Lösch, "Critical Layer Thickness and Electrical Properties of Elastically Strained InGaAs/AlGaAs QWs", Int. Euro MBE-Conf., Grainau, Germany (March 1989)