1993
Der Zugriff auf Originaldateien ist passwortgeschützt (nur für interne Nutzung)
Fachzeitschriften
- J.P. Reithmaier, St. Hausser, H.P. Meier, W. Walter, "Growth Studies of (Al,Ga,In)As on InP by Molecular Beam Epitaxy", J. of Cryst. Growth 127, pp. 755-758 (1993) (pdf-Datei)
- R. Germann, St. Hausser, J.P. Reithmaier, "Reactive Ion Etching on InAlAs with Ar/Cl2 Mixtures for Ridge Waveguide Lasers", Microelectronic Eng. 21, pp. 345 (1993) (pdf-Datei)
- C.S. Baxter, W.M. Stobbs, R.F. Broom, J.P. Reithmaier, "Observation of a novel form of ordering in Al0.5In0.5As and (Ga,Al)0.5In0.5As", J. Cryst. Growth 131, pp. 419-425 (1993) (pdf-Datei)
- L.R. Brovelli, R. Germann, J.P. Reithmaier, H. Jäckel, H.P. Meier, H. Melchior, "Transform-Limited Picosecond Optical Pulses from a Mode-Locked InGaAs/AlGaAs QW Laser with Integrated Passive Waveguide Cavity and QW Modulator", IEEE Phot. Technol. Lett. 5, pp. 896-899 (1993) (pdf-Datei)
- J. Dreybrodt, F. Faller, A. Forchel, J.P. Reithmaier, "Influence of the cap layer thickness on the optical properties of near surface GaInAs/GaAs quantum wells", Mat. Sci. Eng. B 21, pp. 198-200 (1993)
- J. Dreybrodt, A. Forchel, J.P. Reithmaier, "Optical properties of GaInAs/GaAs surface quantum wells", Phys. Rev. B 48, pp. 14741-14744 (1993) (pdf-Datei)
- J. Dreybrodt, A. Forchel, J.P. Reithmaier, "Excitonic transitions in GaInAs/GaAs surface quantum wells", Journal de Physique IV 3, pp. C5 265-268 (1993)
- V. Shanov, B. Ivanov, C. Popov, "Growth rate behavior of LCVD aluminium", Processing of Advanced Materials 3, pp. 41-44 (1993)
- V. Shanov, C. Popov, B. Ivanov, A. Souleva, G. Peev, "An experimental approach for growth rate determination of LCVD-written aluminium stripes", Journal of Materials Science: Materials in Electronics 4, pp. 55-58 (1993) (pdf-Datei)
- V. Shanov, C. Popov, B. Ivanov, "LCVD of aluminium stripes obtained by pyrolysis of TMAA and TMA", Journal de Physique IV 3, pp. C3 255-260 (1993)
- C. Popov, B. Ivanov, V. Shanov, "Mass spectrometric study of laser induced pyrolytic decomposition of TIBA and TMAA", Journal de Physique IV 3, pp. C3 107-112 (1993)
Konferenzbeiträge
- J. Dreybrodt, F. Faller, A. Forchel, J.P. Reithmaier, "Influence of the cap layer thickness on the optical properties of near surface GaInAs/GaAs quantum wells", E-MRS Spring Meeting, Strasbourg, France (May 1993)
- J. Dreybrodt, A. Forchel, J.P. Reithmaier, "Excitonic transitions in GaInAs/GaAs surface quantum wells", OECS3 Conf., Montpellier, France (1993)
- J.P. Reithmaier, A. Kieslich, H. Sawaragi, A. Forchel, "High resolution focussed ion beam implantation with post objective lens retarding and acceleration", Int. Conf. on Microcircuit and Engineering, Maastrich, The Netherlands (September 1993)