2018

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Fachzeitschriften

S. Bauer, V. Sichkovskyi, J.P. Reithmaier, "Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 µm high-speed lasers", Journal of Crystal Growth, vol. 491, pp. 20-25 (2018). (pdf-Datei)

W. Rudno-Rudziński, M. Syperek, A. Maryński, J. Andrzejewski, J. Misiewicz, S. Bauer, V. Sichkovskyi, J.P. Reithmaier, M. Schowalter, B. Gerken, A. Rosenauer, G. Sę, "Control of Dynamic Properties of InAs/InAlDaAs/InP Hybrid Quantum Well-Quantum Dot Structures Designed as Active Parts of 1.55 µm Emitting Lasers", Phys. Status Solidi A, vol. 215, 1700455 (2018). (pdf-Datei)
M. Syperek, J. Andrzejewski, E. Rogowicz, J. Misiewicz, S. Bauer, V. I. Sichkovskyi, J.P. Reithmaier, G. Sek, "Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 µm", Appl. Phys. Lett. 112, 221901 (2018). (pdf-Datei)
N. Felgen, B. Naydenov, F. Jelezko, J. P. Reithmaier, C. Popov, "Homoepitaxial Diamond Structures with Incorporated SiV Centers", Phys. Status Solidi A, vol. 215, 1800371 (2018). (pdf-Datei)

A. Kors, J. P. Reithmaier, M. Benyoucef, "Telecom wavelength single quantum dots with very small excitonic fine-structure splitting", Appl. Phys. Lett. 112, 172102 (2018). (pdf-Datei)
L. Dusanowski, M. Gawelczyk, J. Misiewicz, S. Höfling, J. P. Reithmaier, G. Sek, "Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 µm", Appl. Phys. Lett. 113, 043103 (2018). (pdf-Datei)
V. Mikhelashvili, O. Eyal, I. Khanonkin, S. Banyoudeh, V. Sichkovskyi, J. P. Reithmaier, G. Eisenstein, "On the relationship between electrical and electro-optical characteristics of InAs/InP quantum dot lasers", Journal of Applied Physics 124, 054501 (2018). (pdf-Datei)
A. Abdollahinia, S. Banyoudeh, A. Rippien, F. Schnabel, O. Eyal, I. Cestier, I. Kalifa, E. Mentovich, G. Eisenstein, J.P. Reithmaier, "Temperature stability of static and dynamic properties of 1.55 µm quantum dot lasers", Optics Express 26, 6056 (2018). (pdf-Datei)
D. Merker, M. Kesper, L. L. Kailing, F. Herberg, J. P. Reithmaier, I. V. Pavlidis, C. Popov, "Nanostructured modified ultrananocrystalline diamond surfaces as immobilization support for lipases", Diamond and Related Materials 90, 32-39 (2018). (pdf-Datei)
W. Rudno-Rudzinski, M. Syperek, J. Andrzejewski, E. Rogowicz, G. Eisenstein, S. Bauer, V. I. Sichkovskyi, J. P. Reithmaier, G. Sek, "Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot-quantum well structures", Scientific Reports 8, 12317 (2018). (pdf-Datei)
I. Khanonkin, A. M. Mishra, O. Karni, S. Banyoudeh, F. Schnabel, V. Sichkovskyi, V. Mikhelashvili, J. P. Reithmaier, G. Eisenstein, "Ramsey fringes in a room-temperature quantum-dot semiconductor optical amplifier", Phys. Rev. B 97, 241117 (2018). (pdf-Datei)
I. Khanonkin, G. Eisenstein, M. Lorke, S. Michael, F. Jahnke, A. K. Mishra, J. P. Reithmaier, "Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier", Phys. Rev. B 98, 125307 (2018). (pdf-Datei)
A. V. Mikhailov, V. V. Belykh, D. R. Yakovlev, P. S. Grigoryev, J. P. Reithmaier, M. Benyoucef, M. Bayer, "Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths", Phys. Rev. B 98, 205306 (2018). (pdf-Datei)
P. Mrowiński, M. Emmerling, C. Schneider, J. P. Reithmaier, J. Misiewicz, S. Höfling, G. Sęk, "Photonic engineering of highly linearly polarized quantum dot emission at telecommunication wavelengths", Phys. Rev. B 97, 165427 (2018). (pdf-Datei)
J. P. Reithmaier, M. Benyoucef, "Chapter Two - III-V on Silicon Nanocomposites", Semiconductors and Semimetals 99, 27-42 (2018). (pdf-Datei)

Konferenzbeiträge (invited)

J.P. Reithmaier, G. Eisenstein, "High-Speed Directly Modulated 1.55 µm Quantum Dot Lasers", Conf. on Physics of Quantum Electronics (PQE), Snowbird, Utah, USA (Jan. 2018).
J.P. Reithmaier, G. Eisenstein, "Temperature Insensitive Quantum Dot Lasers and Optical Amplifiers", Int. Conf. on Nano-photonics and Nano-optelectronics", Yokohama, Japan (April 2018).
G. Eisenstein, J.P. Reithmaier, "How short time scales substitute for cryogenic cooling: Quantum Coherent Effect in Room Temperature QD Amplifiers", Photonics Europe, Strasbourg, France (May, 2018).
J.P. Reithmaier, M. Benyoucef, "Telecom Wavelength Nanophotonic Elements for Quantum Communication", Symposium on Quantum Science and Quantum Engineering, Technion, Haifa, Israel (May 2018).
G. Eisenstein, M. Benyoucef, J.P. Reithmaier, "Nanostructured Semiconductors for the 1.5 µm Wavelength Range and Their Applications in Classical and Quantum Communication", Sino-German Symposium on Functional Nano-Materials Science (FNMS2018), Hangzhou, China (May 2018).
M. Benyoucef, J.P. Reithmaier, "Telecom Wavelength Nanophotonic Elements for Quantum Communication", IEEE Summer Topicals Meeting, Waikoloa, Hawaii, USA (July 2018).
J.P. Reithmaier, G. Eisenstein, "1.55 µm Quantum Dot Lasers and Amplifiers with High Temperature Stability", European Semiconductor Laser Workshop, Bari, Italy (September 2018).
J.P. Reithmaier, G. Eisenstein, "1.5 µm Quantum Dot Lasers", IEEE Int. Conf. on Semicond. Lasers, Santa Fe, USA (September 2018).
M. Benyoucef, J.P. Reithmaier , “InP-based quantum dots embedded in microcavity emitting in the low‐loss telecom wavelength range”, 8^th Korean-German-French workshop on nanophotonics, Gyeryong, Korea (October, 2018).
J.P. Reithmaier, "Semiconductor Nanomaterials and Applications for Classical and Quantum Optical Communication", 6th Nano Israel Conference, Jerusalem, Israel (October 2018).
J.P. Reithmaier, "Nanostructured Materials and Devices for Optical Communication and Quantum Information Technologies", Nanosymposium, Wien, Austria (December 2018).
J.P. Reithmaier, "Novel Nanotechnological Approaches for Quantum Communication and Quantum Computing", Physics Colloquium at Wroclaw University of Technology, Wroclaw, Poland (10. December 2018).
J.P. Reithmaier, "Nanostructured Materials and Devices for Optical Communication and Quantum Information Technologies", Physics Seminar of the Center for Advanced Materials and Nanotechnology, Wroclaw, Poland (11. December 2018).

Weitere Konferenzbeiträge

N. Felgen, A. Schmidt, J.P. Reithmaier, C. Popov, Fabrication of diamond photonic structures, 3^rd International Symposium on Dielectric Materials and Applications (ISyDMA’2018), Beni Mellal, Morocco (April 2018).
O. Eyal, A. Willinger, V. Mikhelashvili, S. Banyoudeh, F. Schnabel, V. Sichkovskyi, J.P. Reithmaier, G. Eisenstein, "High Performance 1550 nm Quantum Dot Semiconductor Optical Amplifiers Operating at 25-100 °C", Optical Fiber Communications conference and Expostion (OFC), San Diego, USA (March 2018).
A. Becker, T. Septon, S. Ghosh, M. Bjelica, V. Sichkovskyi, A. Rippien, F. Schnabel, B. Witzigmann, G. Eisenstein, J.P. Reithmaier, "Narrow-Linewidth 1.5 µm Quantum Dot Distributed Feedback Lasers for Next Generation Coherent Communication", VDE-ITG-Tagung, Leipzig, Germany (May, 2018). ITG-Fachbericht.
L. Rickert, B. Fritsch, A. Kors, K. Fuchs, J. P. Reithmaier, and M. Benyoucef, “Telecom wavelengths single InP-based quantum dots embedded in microcavity”, International Conference on Quantum Dots, Toronto, Canada (June, 2018)
A. Maryński, M. Syperek, J. Andrzejewski, M.Yacob, J. P. Reithmaier, M. Benyoucef, and G. Sęk, “Thermal stability and carrier migration process in low-density InAs/InAlGaAs/InP quantum dots emitting at telecommunication C-band”, NOEKS 14, Berlin (September, 2018)
S. Bauer, V. Sichkovskyi, J.P. Reithmaier, "Growth and optical characteristics of InP-based tunnel injection structures and their application in high-speed lasers", Int. Conf. on Molecular Beam Epitaxy (ICMBE), Shanghai, China (September, 2018).
T. Septon, S. Gosh, A. Becker, M. Bjelica, V. Sichkovskyi, A. Rippien, F. Schnabel, B. Witzigmann, J.P. Reithmaier, G. Eisenstein, "Spectral characteristics of narrow linewidth InAs/InP quantum dot distributed feedback lasers", Int. Sem. Laser Conf. (ISLC), Santa Fe, USA (September, 2018).
I. Khanonkin, M. Lorke, S. Michael, A.K. Mishra, J.P. Reithmaier, F. Jahnke, G. Eisenstein, "Carrier Dynamics in a 1.55 μm Tunneling Injection Quantum Dot Semiconductor Optical Amplifier", Int. Sem. Laser Conf. (ISLC), Santa Fe, USA (September, 2018).
V. Miskhelashvili, O. Eyal, I. Khanonkin, S. Banyoudeh, V. Sichkovskyi, J.P. Reithmaier, G. Eisenstein, "On The Relationship Between Electrical and Electro-Optical Characteristics in 1.55 μm Quantum Dot Lasers", Int. Sem. Laser Conf. (ISLC), Santa Fe, USA (September, 2018).
N. Felgen, T. Jaffe, B. Naydenov, A. Schmidt, J. P. Reithmaier, M. Orenstein, F. Jelezko, C. Popov, Diamond photonic structures for integration of color centers, 29^th International Conference on Diamond and Carbon Materials, Dubrovnik, Croatia (September 2018).
D. Merker, T. Weingärtner, T. Bergfeldt, B. Popova, J.P. Reithmaier, C. Popov, Silver nanoparticles embedded in ultrananocrystalline diamond films for antimicrobial applications in implant coatings, 29^th International Conference on Diamond and Carbon Materials, Dubrovnik, Croatia (September 2018).