2016

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Fachzeitschriften

P. Mrowinski, K. Tarnowski, J. Olszewski, A. Somers, M. Kamp, S. Höfling, J.P. Reithmaier, W. Urbanczyk, J. Misewicz, P. Machnikowski, G. Sek, "Effect of Dielectric Medium Anisotropy on the Polarization Degree of Emission from a Single Quantum Dash", Acta Physica Polonica A, vol. 129, no. 1-A, pp. 48-52 (2016). (pdf-Datei)

S. Gordon, M. Yacob, J.P. Reithmaier, M. Bnyoucef, A. Zrenner, "Coherent photocurrent spectroscopy of single InP-based quantum dots in the telecom band at 1.5 µm", Appl. Phys. B, vol. 122, article 37, pp. 1-7 (2016). (pdf-Datei)

P. Podemski, M. Pieczarka, A. Marynski, J. Misiewicz, A. Löffler, S. Höfling, J.P. Reithmaier, S. Reitzenstein, G. Sek, "Probing the carrier transfer processes in a self-assembled system with In_0.3Ga_0.7As/GaAs quantum dots by photoluminescence excitation spectroscopy", Superlatt. & Microst. 93, pp. 214-220 (2016). (pdf-Datei)

Ł. Dusanowski, M. Syperek, J. Misiewicz, A. Somers, S. Höfling, M. Kamp, J. P. Reithmaier, and G. Sęk, "Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K", Appl. Phys. Lett. 108, 163108 (2016). (pdf-Datei)

V.V. Belykh, D.R. Yakovlev, J.J. Schindler, E.A. Zhukov, M.A. Semina, M. Yacob, J.P. Reithmaier, M. Benyoucef, M. Bayer, "Large anisotroy of electron and hole g factors in infrared-emitting InAs/InAlGaAs self-assembled quantum dots", Phys. Rev. B 93, 125302 (2016). (pdf-Datei)

S. Banyoudeh, A. Abdollahinia, O. Eyal, F. Schnabel, V. Sichkovskyi, G. Eisenstein, J.P. Reithmaier, “Temperature-Insensitive High-Speed Directly Modulated 1.55 µm Quantum Dot Lasers“, IEEE Photonics Technology Letters, DOI: 10.1109/LPT.2016.2600508 (pdf-Datei)

N. Felgen, B. Naydenov, S. Turner, F. Jelezko, J. P. Reithmaier, C. Popov, "Incorporation and study of SiV centers in diamond nanopillars", Diamond & Rel. Mat. 64, pp. 64-69 (2016). (pdf-Datei)

A. Voss, H. Wei, Y. Zhang, S. Turner, G. Ceccone, J.P. Reithmaier, M. Stengl, C. Popov, "Strong attachment of circadian pacemaker neurons on modified ultrananocrystalline diamond surfaces", Mat. Sci. & Eng. C 64, pp. 278-285 (2016). (pdf-Datei)

C. Petkov, P. M. Reintanz, W. Kulisch, A.K. Degenhardt, T. Weidner, J.E. Baio, R. Merz, M. Kopnarski, U. Siemeling, J.P. Reithmaier, C. Popov, "Functionalization of nanocrystalline diamond films with phthalocyanines", Applied Surface Science 379, pp. 415-423 (2016). (pdf-Datei)
O. Karni, A.K. Mishra, G. Eisenstein, V. Ivanov, J.P. Reithmaier, "Coherent control in room-temperature quantum dot semiconductor optical amplifiers using shaped pulses", Optica 3 (6), 570 (2016). (pdf-Datei)
P. Mrowinski, M. Zielinski, M. Swiderski, J. Misewicz, A. Somers, J.P. Reithmaier, S. Höfling and G. Sek, "Excitonic fince structure and binding energies of excitonic complexes in single InAs quantum dashes", Phys. Rev. B94(11), 115434 (2016). (pdf-Datei)
W. Kulisch, A. Voss, D. Merker, J.P. Reithmaier, R. Merz, M. Kopnarski, C. Popov, "Plasma surface fluorination of ultrananocrystalline diamond films", Surf. & Coat. Technol. 302, pp. 448-453. (2016) (pdf-Datei)
M. Syperek, L. Dusanowski, G. Sek, A. Somers, J.P. Reithmaier, S. Höfling and J. Misiewicz "Excition spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55 µm", Apl. Phys. Lett. 109, 193108. (2016) (pdf-Datei)
J.P. Reithmaier and M. Benyoucef, "III-V / Si Integration for Photonics", ECS Trans. 72(4): 171-179 (invited, May 2016)
P. Mrowiński, K. Tarnowski, J. Olszewski, A. Somers, M. Kamp, J. P. Reithmaier, W. Urbańczyk, J. Misiewicz, P. Machnikowski and G. Sęk, "Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment", J. Appl. Phys. 120, 074303 (2016)

Konferenzbeiträge

J.P. Reithmaier, S. Banyoudeh, A. Abdollahinia, V. Sichkovskyi, A. Becker, A. Rippien, F. Schnabel, B. Bjelica, B. Witzigmann, O. Eyal, G. Eisenstein, "The impact of low-dimensional gain material on emission linewidth and modulation speed in semiconductor lasers", Conf. on Physics of Quantum Electronics (PQE), Snowbird, Utah, USA (invited talk, January 2016). (pptx-File, 8 MB)

J.P. Reithmaier, S. Banyoudeh, A. Abdollahinia, F. Schnabel, V. Sichkovskyi, O. Eyal, G. Eisenstein, "High-speed directly modulated 1.5 μm quantum dot lasers", Photonics-Europe, Brussels, Belgium (invited talk, April 2016). (pdf-file of proceed. paper)

J.P. Reithmaier, M. Benyoucef, "III-V / Si Integration for Photonics", spring meeting of electrochemical society (ECS), San Diego, USA (invited talk, May 2016).

J.P. Reithmaier, S. Banyoudeh, A. Abdollahinia, V. Sichkovskyi, A. Becker, O. Eyal, G. Eisenstein, "InP-based quantum dot lasers for high-speed optical communication", Compound Semicond. Week (CSW), Toyama, Japan (invited talk, June 2016).

J.P. Reithmaier, "III-V integration on Si for photonics", IEEE Summer Topicals meeting on Emerging Technology for Integrated Photonics, Newport Beach, CA, USA (invited talk, July 2016).

J.P. Reithmaier, "Efficient quantum dot based light sources for silicon photonics", ECOC Sunday Workshop on Next Generation Ultra-Broadband Silicon Photonics Based Integrated Circuits, Düsseldorf, Germany (invited talk, September 2016).

J.P. Reithmaier, S. Banyoudeh, A. Abdollahinia, V. Sichkovskyi, A. Becker, O. Eyal, G. Eisenstein, "1.5 µm quantum dot lasers for high-speed direct modulation and narrow linewidth emission", IEEE Photonics Conf., Waikoloa Village, Hawaii, USA (invited talk, October 2016).

S. Banyoudeh, A. Abdollahinia, V. Sichkovskyi, J.P. Reithmaier, "1.5 µm quantum dot laser material with high temperature stability of threshold current density and external differential efficiency", Photonics West Conf., San Francisco, CA, USA (February, 2016). Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670I (March 7, 2016) (pptx-File, 2 MB) (pdf-File of proceed. paper)

S. Banyoudeh, A. Abdollahinia, O. Eyal, F. Schnabel, V. Sichkovskyi, G. Eisenstein, J.P. Reithmaier, "High-speed directly modulated 1.5 µm quantum dot lasers", Photonics West Conf., San Francisco, CA, USA (February, 2016). Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670L (March 7, 2016) (pptx-File, 9 MB) (pdf-File of proceed. paper)

A. Becker, V. Sichkovskyi, M. Bjelica, O. Eyal, P. Baum, A. Rippien, F. Schnabel, B. Witzigmann, G. Eisenstein and J.P. Reithmaier, "Narrow-linewidth 1.5 μm quantum dot distributed feedback lasers", Photonics West Conf., San Francisco, CA, USA (February, 2016). Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670Q (March 7, 2016) (pptx-File, 7 MB) (pdf-File of proceed. paper)

O. Eyal, G. Eisenstein, S. Banyoudeh, A. Abdollahinia, F. Schnabel and J.P. Reithmaier, "High-Speed InP-Based Quantum Dot Lasers With Low Temperature Sensitivity", Conf. on Lasers & Electro-Optics (CLEO), San José, CA, USA (June, 2016).
A. Kors, M. Yacob, J. P. Reithmaier and M. Benyoucef, “InP-based photonic crystal microcavities embedded with InAs quantum dots for telecom wavelengths”, Hybrid Systems for Quantum Optics, Bad Honnef, Germany (January 2016).

A. Kors, K. Fuchs, M. Yacob, J. P. Reithmaier and M. Benyoucef, “InP-based photonic crystal microcavities embedded with InAs quantum dots for telecom wavelengths”, DPG, Regensburg, Germany (March 2016).

A. Kors, J. P. Reithmaier and M. Benyoucef, “InP-based single QDs and nanocavities for quantum communication at telecom wavelengths”, German MBE workshop, München, Germany (October 2016).
G. Eisenstein, J. P. Reithmaier, "Coherent Control in Room Termperature InP Quantum Dot Gain Media, IEEE Photonics Conf. Waikoloa Village, Hawaii, USA (October 2016)