2013
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Fachzeitschriften
- O. Karni, A. Capua, G. Eisenstein, D. Franke, J. Kreissl, H. Künzel, D. Arsenijevic, H. Schmeckebier, M. Stubenrauch, M. Kleinert, D. Bimberg, C. Gilfert, J.P. Reithmaier, "Nonlinear pulse propagation in a quantum dot laser", Opt. Expr. 21 (5), 5715 (2013) (pdf-Datei)
- M. Benyoucef, M. Usman, J.P. Reithmaier, "Bright light emissions with narrow spectral linewidth from single InAs/GaAs quantum dots directly grown on silicon substrates", Appl. Phys. Lett.102, 132101 (2013) (pdf-Datei)
- V.I. Sichkovskyi, M. Waniszek, J.P. Reithmaier, "High-gain wavelength-stabilized 1.55 µm InAs/InP(100) based lasers with reduced number of quantum dot active layers", Appl. Phys. Lett.102, 221117 (2013) (pdf-Datei)
- E. Petkov, C. Popov, T. Rendler, C. Petkov, F. Schnabel, H. Fedder, S.-Y, Lee, W. Kulisch, J.P. Reithmaier and J. Wrachtrup, "Investigation of NV centers in diamond nanocrystallites and nanopillars", Physica Status Solidi (b) 250, pp. 48-50 (2013) (pdf-Datei)
- M. Benyoucef, J.P. Reithmaier, "Direct growth of III-V quantum dots on silicon substrates: structural and optical properties", Semicond. Sci. Technol. 28, 094004 (2013) (invited) (pdf-Datei)
- A. Maryński, G. Sęk, A. Musiał, J. Andrzejewski, J. Misiewicz, C. Gilfert, J.P. Reithmaier, A. Capua, O. Karni, D. Gready, G. Eisenstein, G. Atiya, W. D. Kaplan, S. Kölling, "Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy", J. Appl. Phys. 114, 094330 (2013) (pdf-Datei)
- C. Petkov, U. Glebe, E. Petkov, A. Pasquarelli, C. Pietzka, M. Veres, L. Himics, R. Merz, W. Kulisch, U. Siemeling, J.P. Reithmaier, and C. Popov, "Grafting of manganese phthalocyanine on nanocrystalline diamond films", Physica Status Solidi (b) 210 (10), pp. 2048 – 2054 (2013) (pdf-Datei)
- E. Petkov, T. Rendler, C. Petkov, F. Schnabel, J. P. Reithmaier, J. Wrachtrup, C. Popov, and W. Kulisch, "Investigation of NV centers in nano- and ultrananocrystalline diamond pillars", Physica Status Solidi (a) 210 (10), pp. 2066 – 2073 (2013) (pdf-Datei)
- M. Benyoucef, M. Yacob, J.P. Reithmaier, J. Kettler, P. Michler, "Telecom-wavelength (1.5 µm) single-photon emission from InP-based quantum dots", Appl. Phys. Lett.103, 162101 (2013) (pdf-Datei)
- O. Karni, A. Capua, G. Eisenstein, V. Sichkovskyi, V. Ivanov, J.P. Reithmaier, "Rabi oscillations and self-induced transparency in InAs/InP quantum dot semiconductor optical amplifier operating at room temperature", Optics Express 21 (22), 26786 (2013) (pdf-Datei)
- S. Combrié, G. Lehoucq, A. Junay, S. Malaguti, G. Bellanca, S. Trillo, L. Ménager, J.P. Reithmaier, and A. de Rossi, "All-optical signal processing at 10 GHz using a Photonic Crystal Molecule", Appl. Phys. Lett. 103, 193510 (2013) (pdf-Datei)
- M. Heuck, S. Combrié, G. Lehoucq, S. Malaguti, G. Bellanca, S. Trillo, P.T. Kristensen, J. Mork, J.P. Reithmaier, and A. de Rossi, "Heterodyne pump probe measurements of nonlinear dynamics in an indium phosphide photonic crystal cavity", Appl. Phys. Lett. 103, 181120 (2013)
- L. Dusanowski, M. Syperek, W. Rudno-Rudzinski, P. Mrowinski, G. Sek, J. Misiewicz, A. Somers, J.P. Reithmaier, S. Höfling, and A. Forchel, "Exciton and biexcition dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 µm", Appl. Phys. Lett. 103, 253113 (2013)
- J. Evtimova, W. Kulisch, C. Petkov, E. Petkov, F. Schnabel, J.P. Reithmaier, C. Popov, "Reactive ion etching of nanocrystalline Diamond for the fabrication of one-dimensional nanopillars", Diamond and Rel. Mat. 36, pp. 58-63 (2013).
Konferenzbeiträge
- V. Sichkovskyi, V. Ivanov, J.P. Reithmaier "High Modal Gain 1.5 µm InP based Quantum Dot Lasers: Dependence of Static Properties on the Active Layer Design", Photonics West Conf., San Francisco, USA (February 2013)
- Dmitry Bykov, Bruno Gonzales, Horacio L. Rivera, V. Sichkovskyi, J.P. Reithmaier "Study of the temperature and cavity length effects on threshold current density and wavelength schift in quantum dot lasers", Photonics West Conf., San Francisco, USA (February 2013)
- V.I. Sichkovskyi, M. Waniczek, F. Schnabel, A. Rippien, J.P. Reithmaier, "High-gain wavelength stabilized 1.55 µm InAs/InP(100) based quantum dot lasers", E-MRS 2013 Spring Meeting, Strasbourg, France (May 2013)
- J.P. Reithmaier, V. Ivanov, V. Sichkovskyi, C. Gilfert, A. Rippien, F. Schnabel, D. Gready and G. Eisenstein, "Static and dynamic characteristics of InAs/AlGaInAs/InP quantum dot lasers operation at 1550 nm", 25th International Conference on Indium Phosphide and Related Materials, Kobe, Japan (May 2013)
- J.P. Reithmaier, V. Ivanov, V. Sichkovskyi, D. Gready and G. Eisenstein, "New Class of 1.55 µm Quantum Dot Lasers for Future High Data Rate Optical Communication", The 10th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), Kyoto, Japan (July 2013) (invited)
- J.P. Reithmaier, V. Ivanov, V. Sichkovskyi, D. Gready and G. Eisenstein, "1.5 µm InP Based QD Lasers for High-speed Optical Communication Systems", The 34th Progress in Electromagnetics Research Symposium (PIERS), Stockholm, Sweden (August 2013) (invited)
- J.P. Reithmaier, V. Ivanov, V. Sichkovskyi, C. Gilfert, A. Rippien, N. Felgen, F. Schnabel, K. Fuchs, K. Koshuharov, Dr. Gready, G. Eisenstein, "InP-based 1.5 µm quantum dot lasers: Static and dynamic properties", IEEE Photon. Soc. Conf. (ICP), Seattle, USA (September 2013) (invited)
- J.P. Reithmaier, V. Sichkovskyi, V. Ivanov, K. Kozhuharov and G. Eisenstein, "InP Based 1.55 µm quantum dot materials and lasers for ultra-narrow line width applications", 2013 International Conference on Solid State Devices and Materials (SSDM), Fukuoka, Japan (September 2013) (invited)
- J.P. Reithmaier, "Semiconductor nanostructering and applications in communication technologies", Int. Workshop on Quantum Sciences, VW foundation, Hannover, Germany (October 2013) (invited)